FABRICATION METHODS FOR MOS DEVICE AND CMOS DEVICE

专利名称：FABRICATION METHODS FOR MOS DEVICE

AND CMOS DEVICE

发明人：Po-Lun Cheng,Che-Hung Liu申请号：US11622830申请日：20070112

公开号：US20080171412A1公开日：20080717

专利附图：

摘要：Fabrication methods for a MOS device and a CMOS device are provided. Asubstrate is provided with a gate structure formed on the substrate, a lightly-dopeddrain (LDD) region formed near sides of the gate structure in the substrate and a spacer

wall formed on sidewalls of the gate structure and covering a part of the LDD region. Aprotection layer is formed for covering the gate structure, the LDD region and the spacerwall. A part of the protection layer is removed. Another part of the protection layer onthe gate structure and the spacer wall is reserved. A part of the surface of the substrateis exposed. The exposed surface of the substrate is removed for forming a trench. A pre-clean step, including an oxygen plasma process, is performed on the bottom of thetrench. An epitaxy material layer is formed in the trench.

申请人：Po-Lun Cheng,Che-Hung Liu

地址：Kaohsiung County TW,Tainan County TW

国籍：TW,TW

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