Voltage supply with low power and leakage current

专利名称：Voltage supply with low power and leakage

current

发明人：Hiroyuki Mizuno,Kiyoo Itoh申请号：US12591146申请日：20091110

公开号：US20100052775A1公开日：20100304

专利附图：

摘要：In a semiconductor integrated circuit device, a circuit block has a first MOStransistor, and a leakage current control circuit having a second MOS transistor and acurrent source, a source and drain circuit of the second MOS transistor is formed

between the power supply line of the circuit block and a voltage point where operatingvoltage is supplied. This current source is connected to the power supply line and in afirst state, the power supply line is driven to a first voltage by the second MOS transistor.In a second state, the power supply line is controlled at a second voltage by current flowin the current source and, the voltage applied across the source and drain of the firstMOS transistor in the second state is smaller than the voltage applied across the sourceand drain of the first MOS transistor in the first state.

申请人：Hiroyuki Mizuno,Kiyoo Itoh

地址：Tokyo JP,Higashikurume JP

国籍：JP,JP

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