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专利名称：Method for recovering from errors in flash
memory
发明人：Menahem Lasser,Mark Murin申请号：US11397609申请日：20060405
公开号：US20070091677A1公开日：20070426
专利附图：
摘要：Methods, devices and computer readable code for reading data from one ormore flash memory cells, and for recovering from read errors are disclosed. In someembodiments, in the event of an error correction failure by an error detection and
correction module, the flash memory cells are re-read at least once using one or moremodified reference voltages, for example, until a successful error correction may becarried out. In some embodiments, after successful error correction a subsequent readrequest is handled without re-writing data (for example, reliable values of the read data)to the flash memory cells in the interim. In some embodiments, reference voltagesassociated with a reading where errors are corrected may be stored in memory, andretrieved when responding to a subsequent read request. In some embodiments, themodified reference voltages are predetermined reference voltages. Alternatively oradditionally, these modified reference voltages may be determined as needed, forexample, using randomly generated values or in accordance with information provided bythe error detection and correction module. Methods, devices and computer readablecode for reading data for situations where there is no error correction failure are alsoprovided.
申请人：Menahem Lasser,Mark Murin
地址：Kohav-Yair IL,Kfar Saba IL
国籍：IL,IL
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