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专利名称：Chemical deposition reactor and method of
forming a thin film using the same
发明人：Chun-Soo Lee,Won-Gu Kang,Kyu-Hong
Lee,Kyoung-Soo Yi
申请号：US09763238申请日：20010214公开号：US065391B1公开日：20030401
专利附图：
摘要：A chemical deposition reactor capable of switching rapidly from one processgas to another and method of forming a thin film using the same. The reactor of the
present invention comprises: a reactor cover, having an inlet and an outlet, for keepingreactant gases from other part of the reactor where the pressure is lower than inside ofthe reactor; a gas flow control plate, fixed onto the reactor cover, for controlling the gasflow through inlet and outlet by the spacing between itself and the reactor cover; and asubstrate supporting plate for confining a reaction cell with the reactor cover. Themethod of the present invention can be accomplished using the above reactor. In themethod, process gases including a deposition gas, a reactant gas and a purge gas aresequentially and repeatedly supplied in the reactor to form a thin film on a substrate. ARF (Radio Frequency) plasma power is applied to a plasma electrode of the reactorsynchronised with the supply of at least one among the process gases.
申请人：GENITECH, INC.
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